b29f400/807 1/3 complete data available on data-on-disc cd-rom or at www.st.com M29F400T m29f400b 4 mbit (512kb x8 or 256kb x16, boot block) single supply flash memory data briefing 5v 10% supply voltage for program, erase and read operations fast access time: 55ns fast programming time 10 m s by byte / 16 m s by word typical program/erase controller (p/e.c.) program byte-by-byte or word-by-word status register bits and ready/busy output memory blocks boot block (top or bottom location) parameter and main blocks block, multi-block and chip erase multi-block protection/temporary unprotection modes erase suspend and resume modes read and program another block during erase suspend low power consumption stand-by and automatic stand-by 100,000 program/erase cycles per block 20 years data retention defectivity below 1ppm/year electronic signature manufacturer code: 0020h device code, M29F400T: 00d5h device code, m29f400b: 00d6h description the m29f400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a byte-by-byteor word- by-word basis using only a single 5v v cc supply. for program and erase operations the necessary high voltages are generated internally. the device can also be programmed in standard program- mers. the array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. blocks can be protected against pro- graming and erase on programming equipment, and temporarily unprotected to make changes in the application. ai01726b 18 a0-a17 w dq0-dq14 v cc M29F400T m29f400b e v ss 15 g rp dq15a1 byte rb logic diagram 44 1 so44 (m) tsop48 (n) 12 x 20 mm
2/3 a0-a17 address inputs dq0-dq7 data input/outputs, command inputs dq8-dq14 data input/outputs dq15a1 data input/output or address input e chip enable g output enable w write enable rp reset / block temporary unprotect rb ready/busy output byte byte/word organisation v cc supply voltage v ss ground signal names dq3 dq9 dq2 a6 dq0 w a3 rb dq6 a8 a9 dq13 a17 a10 dq14 a2 dq12 dq10 dq15a1 v cc dq4 dq5 a7 dq7 nc nc ai01727b M29F400T m29f400b (normal) 12 1 13 24 25 36 37 48 dq8 nc nc a1 nc a4 a5 dq1 dq11 g a12 a13 a16 a11 byte a15 a14 v ss e a0 rp v ss tsop pin connections g dq0 dq8 a3 a0 e v ss a2 a1 a13 v ss a14 a15 dq7 a12 a16 byte dq15a1 dq5 dq2 dq3 v cc dq11 dq4 dq14 a9 w rb a4 nc rp a7 ai01729b M29F400T m29f400b 8 2 3 4 5 6 7 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 20 19 18 17 dq1 dq9 a6 a5 dq6 dq13 44 39 38 37 36 35 34 33 a11 a10 dq10 21 dq12 40 43 1 42 41 a17 a8 so pin connections M29F400T, m29f400b dq3 dq9 dq2 dq0 dq6 dq13 dq14 dq12 dq10 dq15a1 v cc dq4 dq5 dq7 ai01728b M29F400T m29f400b (reverse) 12 1 13 24 25 36 37 48 dq8 dq1 dq11 a16 byte v ss a0 v ss a6 a3 a8 a9 a17 a10 a2 a7 nc nc nc nc a1 nc a4 a5 a12 a13 a11 a15 a14 rp w rb g e tsop reverse pin connections warning: nc = not connected. warning: nc = not connected. warning: nc = not connected.
3/3 M29F400T, m29f400b ordering information scheme operating voltage f5v 10% array matrix t top boot b bottom boot speed -55 (1) 55ns -70 70ns -90 90ns -120 120ns package n tsop48 12 x 20mm m so44 option r reverse pinout tr tape & reel packing temp. range 1 0 to 70 c 6 40 to 85 c 3 40 to 125 c example: M29F400T -55 n 1 tr note: 1. speed obtained with high speed measurement conditions. devices are shipped from the factory with the memory content erased (to ffh). for a list of available options (speed, package, etc...) or for further informationon any aspect of this device, please contact the stmicroelectronics sales office nearest to you.
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